Quantum mechanics

Subthreshold slope

Voltage

Engineering

Planar

Computer graphics (images)

Omega

Computer science

Transistor

Physics

Condensed matter physics

Figure of merit

Topology (electrical circuits)

Subthreshold conduction

Threshold voltage

Optoelectronics

Electrical engineering

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH), low specific on resistance ( RON,SP) and high output current ( ID max ). The excellent channel control capability offered by tri-gate structure led to a reduced OFF-state leakage current ( IOFF), higher ON/OFF ratio, smaller subthreshold slope ( SS) compared to similar planar and recessed-gate devices. With gate to drain length ( L GD ) of 20 μm, a hard VBR of 2050 V were achieved, along with a low RON,SP of 2.42 mΩ·cm 2 , which corresponds to a state-of-the-art figure of merit (FOM) of 1.73 GW/cm 2 . These results unveil the extraordinary prospects of tri-gate technology for future power electronics applications.

High-performance normally-off tri-gate GaN power MOSFETs