nand flash

magnetization switching

IEEE electron device letters

We propose a toggle spin torques magnetic random access memory (TST-MRAM) for ultrafast computing. The write operation of the TST-MRAM is achieved by applying two currents to the MTJ and a heavy metal layer, respectively, in a toggle-like manner. These two currents generate spin transfer torque (STT) and spin-orbit torque (SOT) to switch the magnetization. Thanks to the interplay effect between STT and SOT, low-energy and ultrafast write operation can be implemented without the need for the additional magnetic field. It is important to mention that both the amplitude and duration of the current flowing through the tunnel barrier can be decreased to enhance significantly the write endurance of the MTJ. The results demonstrate that the TST-MRAM is a good candidate for the upper-level caches, where the ultrafast operation and high write endurance are indispensable.

Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing