Electrical engineering

Physics

Transistor

Electrode

Transconductance

Engineering

High-electron-mobility transistor

Voltage

Parasitic capacitance

Composite material

Power (physics)

Materials science

Gallium nitride

Layer (electronics)

Quantum mechanics

Capacitance

Optoelectronics

Electric field

AEU - International Journal of Electronics and Communications

In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor is analysed using discrete field plate technique. Surprisi…

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications