Electrical engineering

Physics

Transistor

Human-body model

CMOS

Engineering

Voltage

NMOS logic

Power (physics)

Materials science

Electrostatic discharge

Electronic engineering

Quantum mechanics

Transmission line

Reliability (semiconductor)

Optoelectronics

IEEE Electron Device Letters

In this letter, we propose a 4H-SiC-based electrostatic discharge (ESD) protection circuitwith a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved floating technology to the 4H-SiC grounded-gate n-type metal-oxide-semiconductor (GGNMOS) for 70-V applications. Electrical characteristics of the 4H-SiC-based conventional GGNMOS, floating-body NMOS, and the proposed ESD protection circuit were compared and analyzed using the transmission-line pulse test. To verify the high-temperature characteristics of the proposed 4H-SiC-based ESD protection circuit, its thermal reliability was measured at high temperatures (300-500 K).

Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications