Quantum mechanics

Engineering

RF power amplifier

Materials science

Layer (electronics)

Predistortion

Gallium nitride

Quadrature amplitude modulation

Telecommunications

Power (physics)

Amplifier

Radio frequency power transmission

Physics

Power-added efficiency

Bit error rate

Electronic engineering

Composite material

Channel (broadcasting)

CMOS

Monolithic microwave integrated circuit

Optoelectronics

Electrical engineering

IEEE Transactions on Microwave Theory and Techniques

This paper presents a monolithic microwave integrated circuit Doherty power amplifier (DPA) operating at sub6 GHz for 5G communication applications by a 0.25-μm gallium nitride high-electron mobility transistor process. A compact impedance inverter and output matching of the DPA are achieved using a transmission line network and shunt capacitors. Also, the size ratio of power cells in the main and auxiliary amplifiers is optimized for a high efficiency at output power backoff (OPBO). The measured peak output power (Pout) and the 1-dB compression point (P1 dB) are 38.7 and 32.1 dBm, respectively, at 5.9 GHz. The power-added efficiency at 6-dB OPBO is up to 49.5%. Without digital predistortion (DPD), the DPA can deliver an average Pout of 23.5 dBm with error vector magnitude (EVM) <;-28 dB and 21.5 dBm with EVM <;-32 dB for 64-quadrature amplitude modulation (QAM) and 256-QAM signals, respectively. The measured X-parameters are employed to further investigate the DPA nonlinear characteristics and verify the accuracy of conventionally used power amplifier characterization/measurement methods for system-level design and testing applications. The simulated results based on the X-parameters also indicate that the average output power can be enhanced up to 25.7 dBm with DPD for 256-QAM.

Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications