Electrical engineering

Physics

Quantum dot

Nanotechnology

Transistor

Characterization (materials science)

CMOS

Silicon on insulator

Engineering physics

Engineering

Voltage

NMOS logic

Cryogenics

Materials science

Electronic engineering

Silicon

Quantum computer

Quantum mechanics

Optoelectronics

Quantum

IEEE Journal of the Electron Devices Society

Silicon co-integration offers compelling scale-up opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This paper reports the characterization of an nMOS quantum-dot dedicated structure below 100 mK. The device under test is built in thin silicon film fabricated with 28 nm high-k metal gate ultra-thin body and ultra-thin buried oxide advanced CMOS technology. The MOS structure is functional with improved performances at cryogenic temperature. The results open new research avenues in CMOS co-integration for quantum computing applications within the FD-SOI platform.

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration