Microelectronics Reliability

Ribbon bonding technique has recently been used as an alternative to wire bonding in order to improve the reliability, performance and reduce cost of power modules. In this work, the reliability of aluminium and copper ribbon bonds for an Insulated Gate Bipolar Transistors (IGBT) power module under power cycling is compared with that of wire bonds under power and thermal cycling loading conditions. The results show that a single ribbon with a cross section of 2000 μm × 200 μm can be used to replace three wire bonds of 400 μm in diameter to achieve similar module temperature distribution under the same power loading and ribbon bonds have longer lifetime than wire bonds under cyclic power and thermal cycling conditions. In order to find the optimal ribbon bond design for both power cycling and thermal cycling conditions, multi-objective optimization method has been used and the Pareto optimal solutions have been obtained for trade off analysis.

An analysis of the reliability and design optimization of aluminium ribbon bonds in power electronics modules using computer simulation method