Electrical engineering

Nanotechnology

Analytical Chemistry (journal)

Epitaxy

Engineering

Hall effect

Composite material

Schottky diode

Chemistry

Metallurgy

Materials science

Corundum

Layer (electronics)

Electrical resistivity and conductivity

Diode

Thermal conductivity

Chromatography

Optoelectronics

Japanese Journal of Applied Physics

Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured α-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 mΩ cm2. The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 °C/W, which is comparable to that of the SiC TO220 device (12.5 °C/W). On the other hand, corundum-structured α-(Rh,Ga)2O3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm3/C, 7.6 × 1017/cm3, and 1.0 cm2 V−1 s−1, respectively. These values were acceptable for the p-type layer of pn diodes based on α-Ga2O3.

A power device material of corundum-structured α-Ga2O3fabricated by MIST EPITAXY®technique