Epitaxy

Chemical vapor deposition

Materials science

Chromatography

Mineralogy

Metastability

Layer (electronics)

Substrate (aquarium)

Geology

Oceanography

Metalorganic vapour phase epitaxy

Sapphire

Thermodynamics

Laser

Physics

Nanotechnology

Organic chemistry

Optics

Characterization (materials science)

Analytical Chemistry (journal)

Crystallography

Chemistry

Optoelectronics

Vapor phase

Materials Research Letters

Heteroepitaxial films of GaO were grown on c-plane sapphire (0001). The stable phase β-GaO was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures between 500C and 850C. Metastable α- and ϵ-phases were grown when using the halide vapor phase epitaxy (HVPE) technique, at growth temperatures between 650C and 850C, both separately and in combination. XTEM revealed the better lattice-matched α-phase growing semi-coherently on the substrate, followed by ϵ-GaO. The epitaxial relationship was determined to be [] ϵ-GaO [] α-GaO [] α-AlO. SIMS revealed that epilayers forming the ϵ-phase contain higher concentrations of Cl introduced during HVPE growth.

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques