doi.org/10.1007/s10470-018-1107-7

A robust and low-power near-threshold SRAM in 10-nm FinFET technology

Sina Sayyah Ensan

,

Mohammad Hossein Moaiyeri

,

Shaahin Hessabi

Analog Integrated Circuits and Signal Processing1.40

Volume: 94, Issue: 3, Pages: 497 - 506

Published: Jan 22, 2018

Paper Fields

Paper Details

Title

A robust and low-power near-threshold SRAM in 10-nm FinFET technology

DOI

doi.org/10.1007/s10470-018-1107-7

Published Date

Jan 22, 2018

Journal

Analog Integrated Circuits and Signal Processing

Volume

94

Issue

3

Pages

497 - 506

Notes

History