Metal

Quantum mechanics

Voltage

Engineering

Oxide

Metallurgy

Materials science

Radiation

Radiation damage

Nuclear physics

Gamma ray

Astrophysics

Semiconductor

Gate oxide

Transistor

Physics

Hysteresis

Radiation hardening

Dielectric

Irradiation

Optics

Absorbed dose

Condensed matter physics

Field-effect transistor

Threshold voltage

Ionizing radiation

Optoelectronics

Electrical engineering

MOSFET

Applied Physics Letters

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

Radiation hardness of <i>β</i>-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation