Electrical engineering

Physics

Finite element method

Electron

Transistor

Electrode

MOSFET

Crystalline silicon

Operations research

Structural engineering

Electron mobility

Engineering

Philosophy

Voltage

Physical chemistry

Strained silicon

Chemistry

Materials science

Stress (linguistics)

Electronic engineering

Condensed matter physics

Amorphous silicon

Linguistics

Silicon

Quantum mechanics

Penetration (warfare)

Capacitance

Optoelectronics

In this paper, an accurate and efficient one dimensional self-consistent numerical solution of <110> uniaxially strained n-MOS structure is presented based on finite element method. The solution is developed using FEMLAB. Significant change occurs in the Eigen energies and the electron occupancies, intrinsic carrier concentration, inversion layer penetration and gate capacitance because of <110> uniaxial tensile stress. The consequences of these changes due to strain are explained.

Modelling of electrostatic properties of &amp;#x003C;110&amp;#x003E; uniaxially strained silicon n-channel mosfets

Modelling of electrostatic properties of &amp;#x003C;110&amp;#x003E; uniaxially strained silicon n-channel mosfets

Modelling of electrostatic properties of <110> uniaxially strained silicon n-channel mosfets