Physics

Nanotechnology

Excimer laser

Laser

Engineering physics

Photolithography

Optics

Photoresist

Lithography

Microelectronics

Materials science

Layer (electronics)

Computer science

Optoelectronics

Wavelength

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

193-nm lithography (Review Paper)