Engineering

Materials science

Mineralogy

Substitution (logic)

Computer science

Chemical engineering

Ferroelectricity

Nanotechnology

Dielectric

Thin film

Crystallography

Chemistry

Programming language

Optoelectronics

Journal of Physics D Applied Physics

La-substituted BiFeO3 (BFO) thin films were formed by depositing sol?gel solutions on Pt/Ti/SiO2/Si (1?0?0) structures. No secondary phase was observed by La-atom-substitution up to 20% in BFO thin films. The micro-structures of the films were changed with an increase in La concentration, which influenced the ferroelectric properties of the films. The dielectric constant of a BFO film was approximately 90 at 1?MHz and it increased to 125 in a 20% La-substituted BFO film, which was probably due to the size effect of grains. The substitution of La atoms in BFO films reduced the leakage current as well as remanent polarization. The leakage current contribution in the hysteresis loop was negligible when the loops were measured at above 20?kHz. The obtained saturated remanent polarization was 50??C?cm?2 in a 5% La-substituted BFO film at 100 kHz.

The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO<sub>3</sub> thin films

The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films

The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO₃ thin films