Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode
Volume: 94, Issue: 2, Pages: 145 - 151
Published: Sep 1, 2003
A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high...