Catalysis

Oxide

Metallurgy

Materials science

Chromatography

Schottky barrier

Palladium

Biochemistry

Semiconductor

Band gap

Diode

Thermodynamics

Hydrogen

Physics

Organic chemistry

Analytical Chemistry (journal)

Schottky diode

Chemistry

Hydrogen sensor

Atmospheric temperature range

Optoelectronics

Sensors and Actuators B Chemical

A new Pt/oxide/InGaP metal-oxide semiconductor (MOS) Schottky diode has been fabricated and studied. Upon exposure to hydrogen, the steady-state and transient responses under different hydrogen concentrations and temperatures are measured. Due to the inherent property of InGaP material, e.g. the wide energy gap, a wide hydrogen-sensing range as large as 300 K (from room temperature to 600 K) is obtained. Even at room temperature, a very high sensitivity over 500% for 9090 ppm hydrogen in air is acquired. Furthermore, the measured absorption response time is less than 1 s at the applied voltage of 0.7 V and 9090 ppm hydrogen concentration atmosphere condition. Simultaneously, based on the analysis of the variation of barrier height and hydrogen coverage, the characteristics of the studied Pt/oxide/InGaP MOS Schottky diode is in good agreement with the Lundström isotherm.

Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode