Ultrahigh electron mobility in suspended graphene
Abstract
We have achieved mobilities in excess of 200,000 cm2 V −1 s−1 at electron densities of ∼2 ×1011 cm−2 by suspending single layer graphene. Suspension ∼150 nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport....
Paper Details
Title
Ultrahigh electron mobility in suspended graphene
Published Date
Jun 1, 2008
Journal
Volume
146
Issue
9-10
Pages
351 - 355
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