Quantum mechanics

Linguistics

Voltage

Engineering

Philosophy

Stacking

Materials science

Stress (linguistics)

Nuclear magnetic resonance

Power (physics)

Diode

Transistor

Physics

Degradation (telecommunications)

Electronic engineering

Reliability (semiconductor)

Schottky diode

Optoelectronics

Electrical engineering

MOSFET

Materials Science Forum

In order to achieve cost reduction or shrinkage of power devices, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD). However, in a SiC p-i-n diode, forward current stress causes reliability degradation due to expansion of the electron-hole recombination-induced stacking faults. Applying the process optimization of the epitaxial layer for the reduction of recombination-induced stacking faults and the body diode screening method to 3.3 kV SiC-MOSFETs, we obtained more stable devices under forward current operation.

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode