Electrical engineering

Physics

Nanotechnology

Topology (electrical circuits)

Skyrmion

Astronomy

Engineering

Dielectric

Chemical physics

Chemistry

Materials science

Condensed matter physics

Polar

Silicon

Quantum mechanics

Optoelectronics

Electric field

Ferroelectricity

Nature

Topological domains in ferroelectrics1–5 have received much attention recently owing to their novel functionalities and potential applications6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides. Two types of skyrmion-like polar nanodomain are observed in oxide bilayers transferred onto silicon, and these nanodomains, with distinct resistive behaviour,&nbsp;can be converted to each other under an external electric field.

High-density switchable skyrmion-like polar nanodomains integrated on silicon