A new strategy to fabricate SnS-SnO2 heterostructure with excellent photoresponse and charge transport properties: Efficient photocatalyst for fast photoreduction of Cr(VI)

A new route has been established to synthesize SnS-SnO2 heterostructure not by assembling SnS with SnO2, rather using SnS thin film as precursor. The synthesized heterostructure shows proper p–n junction with enhanced rectifying nature under light illumination i.e., Schottky Barrier Diode (SBD) characteristics. Several device parameters like conductivity, series resistance, transit time, carrier mobility, barrier height, diffusion coefficient...