Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

This paper considers the contribution of hot electrons to the resistive switching of sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations.  Using various device stack structures, this paper examines the impact of hot-electron injection on resistive switching, where conduction-band offset and Fermi-level difference are utilized.  Support is found for the predictions that hot-electron injection...