Switching‐Modulated Phase Change Memory Realized by Si‐Containing Block Copolymers
Abstract
The phase change memory (PCM) is one of the key enabling memory technologies for next-generation non-volatile memory device applications due to its high writing speed, excellent endurance, long retention time, and good scalability. However, the high power consumption of PCM devices caused by the high switching current from a high resistive state to a low resistive state is a critical obstacle to be resolved before widespread commercialization...
Paper Details
Title
Switching‐Modulated Phase Change Memory Realized by Si‐Containing Block Copolymers
Published Date
Nov 18, 2021
Journal
Volume
17
Issue
50
Pages
2105078 - 2105078
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