Avoiding abnormal grain growth when annealing selective laser melted pure titanium by promoting nucleation

In this study, the recrystallization process of selective laser melted (SLM) commercially pure titanium (CP-Ti) was followed by a quasi-in-situ electron backscatter diffraction (EBSD) method at 800 °C and 700 °C. Abnormal grain growth (AGG) initially emerges at the beginning of annealing at 800 °C and is primarily caused by strain-induced boundary migration (SIBM). However, at the beginning of annealing at 700 °C, many small equiaxed grains are...