A gauge theory for two-band model of Chern insulators and induced topological defects
Volume: 74, Issue: 1, Pages: 015701 - 015701
Published: Dec 10, 2021
Abstract
In this paper a gauge theory is proposed for the two-band model of Chern insulators. Based on the so-called ’t Hooft monopole model, a U (1) Maxwell electromagnetic sub-field is constructed from an SU (2) gauge field, from which arise two types of topological defects, monopoles and merons. We focus on the topological number in the Hall conductance
Paper Details
Title
A gauge theory for two-band model of Chern insulators and induced topological defects
Published Date
Dec 10, 2021
Volume
74
Issue
1
Pages
015701 - 015701
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