Swift heavy ion beam stimulated epitaxial recrystallization of Si/SiO2 heterostructure
Abstract
Ion beam induced epitaxial crystallization of Si/SiO2 heterostructure has attracted significant interest in device fabrication because of its low-temperature processing. In this report, we have used 200 keV Kr+ ions to amorphize the Si/SiO2 layer at room temperature and 100 MeV Ni7+ swift heavy ions to recrystallize at elevated substrate temperature range of 100–300 °C. The regrowth of amorphous layers and out-diffusion of Kr+ ions confirmed by...
Paper Details
Title
Swift heavy ion beam stimulated epitaxial recrystallization of Si/SiO2 heterostructure
Published Date
Feb 1, 2022
Journal
Volume
308
Pages
131153 - 131153
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