Electronic ionisation-induced annealing of pre-existing defects in Al₂O₃ and CaF₂ single crystals

Electronic ionisation-induced annealing of pre-existing defects in CaF2 and Al2O3 single crystals has been investigated. Pre-existing defects (vacancies and interstitials) and defect aggregates were first induced in both crystals by fast neutrons irradiation and then irradiated by 90 MeV Xe ions. After irradiation, the samples were characterized using Doppler Broadened Emission Spectroscopy (DBS). The S parameter and average S values obtained...