Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films

The ferroelectricity in fluorite-structured ferroelectrics such as HfO2 and ZrO2 has attracted increasing interest in both academia and industry. Although the polarization switching kinetics is one of the research topics which critically requires further study for the novel ferroelectric material, various factors affecting the polarization switching kinetics have not been rarely examined to date. Especially in atomic-layer-deposited films, the...