A low-dimensional hybrid p-i-n heterojunction neuromorphic transistor with ultra-high UV sensitivity and immediate switchable plasticity

Volume: 25, Pages: 101223 - 101223
Published: Dec 1, 2021
Abstract
We demonstrate a photoelectric neuromorphic transistor (PENT), consisting of a hybrid p-i-n heterojunction channel of vertically phase-separated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) /poly(methyl methacrylate) (PMMA) as a two-dimensional (2D) sheath and highly-aligned array of long continuous zinc oxide (ZnO) nanowires (NWs) as a quasi-one dimensional (Q1D) core. This is the first report of a hybrid p-i-n heterojunction...
Paper Details
Title
A low-dimensional hybrid p-i-n heterojunction neuromorphic transistor with ultra-high UV sensitivity and immediate switchable plasticity
Published Date
Dec 1, 2021
Volume
25
Pages
101223 - 101223
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