Complex dynamics of a bi-directional N-type locally-active memristor

This paper presents a bi-directional N-type locally-active memristor (LAM) model, which has two symmetrical locally-active regions with respect to the origin. For this memristor, the locally-active regions coincide with the edge of chaos regimes, where complex dynamic behaviors may occur. By deriving the small-signal admittance of the memristor, it is found that the LAM may be pure resistive, inductive or capacitive in terms of biasing voltages....