SiC p+n Junction Diodes Toward Beam Monitor Applications

We report on silicon carbide (SiC) p-n junction diodes with a high blocking voltage over 3 kV. Although SiC radiation sensors have been developed with a Schottky barrier type due to a simple fabrication process in the early stages, p-n junction structures are advantageous due to lower sensitivity of the surface defects. Thus, this system provides an ideal condition to investigate the effect of bulk crystal defects on the characteristics of the...