Si doping-induced phase control, formation of p-type and n-type GaAs nanowires

Vacuum4.00
Volume: 195, Pages: 110643 - 110643
Published: Jan 1, 2022
Abstract
We realized the control on the crystal structure of GaAs nanowires (NWs) by silicon (Si) doping and V/III ratio. This viewpoint has been clearly evidenced by Raman spectrum combined with high-resolution transmission electron microscopy (HRTEM). Undoped GaAs NWs generally show a mixture of zinc blende (ZB) and wurtzite (WZ) phases; the addition of Si dopant and high V/III ratio are beneficial for the nucleation of ZB structure. Field effect...
Paper Details
Title
Si doping-induced phase control, formation of p-type and n-type GaAs nanowires
Published Date
Jan 1, 2022
Journal
Volume
195
Pages
110643 - 110643
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