Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure

Published: Mar 9, 2022
Abstract
Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function...
Paper Details
Title
Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
Published Date
Mar 9, 2022
Journal
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