Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures.

Volume: 9, Pages: 744977
Published: Jan 1, 2021
Abstract
With a direct bandgap, two-dimensional (2D) ZnSe is a promising semiconductor material in photoelectric device fields. In this work, based on first-principles methods, we theoretically studied the modulation of the Schottky barrier height (SBH) by applying horizontal and vertical strains on graphene/ZnSe heterojunction. The results show that the inherent electronic properties of graphene and ZnSe monolayers are both well-conserved because of the...
Paper Details
Title
Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures.
Published Date
Jan 1, 2021
Volume
9
Pages
744977
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