doi.org/10.1016/j.jallcom.2021.162141
Other

Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

Muhammad Ismail
33
,
Chandreswar Mahata
33
,
Sungjun Kim
45
Journal of Alloys and Compounds6.30
Volume: 892, Pages: 162141 - 162141
Published: Sep 29, 2021
Paper Fields
Paper Details
Title
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
DOI
doi.org/10.1016/j.jallcom.2021.162141
Published Date
Sep 29, 2021
Journal
Journal of Alloys and Compounds
Volume
892
Pages
162141 - 162141
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