Photophysical Characteristics of Boron Vacancy-Derived Defect Centers in Hexagonal Boron Nitride

Volume: 125, Issue: 39, Pages: 21791 - 21802
Published: Sep 23, 2021
Abstract
Single-photon emitter (SPE) sources are important building blocks for photonics-based quantum technologies. Recently, the highly bright and versatile SPEs from the two-dimensional insulator material hexagonal boron nitride (hBN) have attracted significant research interest. However, due to the variability of emitter species and properties, an exact correlation between the underlying atomistic structures and their photophysical properties is...
Paper Details
Title
Photophysical Characteristics of Boron Vacancy-Derived Defect Centers in Hexagonal Boron Nitride
Published Date
Sep 23, 2021
Volume
125
Issue
39
Pages
21791 - 21802
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