Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals

Volume: 33, Issue: 43
Published: Sep 12, 2021
Abstract
The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the...
Paper Details
Title
Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals
Published Date
Sep 12, 2021
Volume
33
Issue
43
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.