Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

The optically active silicon‐vacancy (SiV) center in diamonds is an excellent candidate for quantum photonics and sensing applications. To date, optimizing the photoluminescence (PL) collection efficiency of SiV centers has proven difficult. To address this issue, the current study presents a simple two‐step method for preparing single‐crystalline diamond nanoneedle arrays. In the first step, silicon‐doped (001) textured diamond films are...