Materials science

Optoelectronics

Composite material

Physics

Irradiation

Electron beam processing

Silicon

Acceptor

Carbide

Proton

Silicon carbide

Condensed matter physics

Nuclear physics

Materials

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation