Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device
Abstract
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO 2 -based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS
Paper Details
Title
Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device
Published Date
Jan 1, 2021
Journal
Volume
9
Pages
116953 - 116961
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