Analytical measurements of contact resistivity in two-dimensional WSe₂ field-effect transistors

It becomes clear that, in two-dimensional (2D) materials-based devices, sheet resistances underneath electrodes change due to a metallic contact, leading to substantial errors in determining a transfer length. Thus, the extraction of transfer length and corresponding contact resistivity must be revisited to assess the performance of 2D devices. In this study, we present the three different approaches of determining the contact resistivity in 2D...