Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment

Volume: 423, Pages: 127588
Published: Oct 15, 2021
Abstract
null null An oxidation or nitridation treatment was performed on the interfacial layer (IL) with optimal oxidation state in order to form an oxygen diffusion barrier for Ge nMOSFET. Through the analysis of X-ray photoelectron spectroscopy and electrical characterization of Ge nMOSFET, the reaction mechanism and physical model were studied in details. The fewer interface traps and lower subthreshold swing can be achieved by forming oxygen...
Paper Details
Title
Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment
Published Date
Oct 15, 2021
Volume
423
Pages
127588
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