Effects of Schottky barrier height fluctuations on conductivity: Consequences on power-law response in tin oxide gas sensors

Volume: 369, Pages: 115725 - 115725
Published: Oct 1, 2021
Abstract
Potential barriers formed at the intergrain of polycrystalline metal-oxide semiconductors, such as tin oxide, present fluctuations that are usually ignored in the study of gas sensors responses. Fluctuations in the Schottky-type barriers arise from the punctual character and distribution of the charges at the depletion region. Accordingly, we present a numerical model that allows to determine the distribution of the barrier heights. We then...
Paper Details
Title
Effects of Schottky barrier height fluctuations on conductivity: Consequences on power-law response in tin oxide gas sensors
Published Date
Oct 1, 2021
Volume
369
Pages
115725 - 115725
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