Combinatorics

Electrical engineering

Physics

Transistor

Threshold voltage

MOSFET

Mathematics

Silicon on insulator

Temperature measurement

Subthreshold slope

Electron mobility

Field-effect transistor

Engineering

Voltage

Cryogenics

Velocity saturation

Mobility model

Materials science

Condensed matter physics

Silicon

Quantum mechanics

Computational physics

Optoelectronics

Telecommunications

Saturation (graph theory)

IEEE Transactions on Electron Devices

We present compact models that capture published cryogenic temperature effects on silicon carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) and fin field effect transistor (FinFET) devices characteristics within the industry-standard Berkeley short-channel IGFET model (BSIM) framework for cryogenic IC applications such as quantum computing. For the core model charge density/surface potential calculation, we introduce an effective temperature formulation to capture the effects of the band tail states. We also present a compact model that corrects the low-temperature threshold voltage for the band-tail states, Fermi–Dirac statistics, and interface traps. New temperature-dependent mobility and velocity saturation models are accurate down to cryogenic temperature. In addition, we propose that experimentally observed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> dependence of subthreshold swing (SS) at cryogenic temperatures is a consequence of the expectedly higher rate of Coulomb scattering of free carriers.

Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures