2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Volume: 5, Issue: 1
Published: Jul 7, 2021
Abstract
The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS 2 ). A major obstacle for the industrial production of MoS 2 -based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS 2 with tailored 2D properties to allow for the...
Paper Details
Title
2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
Published Date
Jul 7, 2021
Volume
5
Issue
1
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.