Controlled generation of photoemissive defects in 4H-SiC using swift heavy ion irradiation

Defects in SiC have shown tremendous capabilities for quantum technology-based applications, making it necessary to achieve on-demand, high-concentration, and uniform-density defect ensembles. Here, we utilize 100 MeV Ag swift heavy ion irradiation on n-type and semi-insulating 4H-SiC for the controlled generation of the defects that have attracted a lot of attention. Photoluminescence spectroscopy shows strong evidence of VSi emitters in...