Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2
Abstract
We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility μ and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5 K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top and bottom surfaces), with μ=500–3000 cm2/(V s)...
Paper Details
Title
Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2
Published Date
Jun 21, 2021
Journal
Volume
118
Issue
25
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