Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

Volume: 118, Issue: 25
Published: Jun 21, 2021
Abstract
We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility μ and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5 K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top and bottom surfaces), with μ=500–3000 cm2/(V s)...
Paper Details
Title
Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2
Published Date
Jun 21, 2021
Volume
118
Issue
25
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.