Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

Volume: 96, Pages: 94 - 102
Published: Jan 1, 2022
Abstract
In this study, resistive random-access memory (RRAM)-based crossbar arrays with a memristor W/TiO2/HfO2/TaN structure were fabricated through atomic layer deposition (ALD) to investigate synaptic plasticity and resistive switching (RS) characteristics for bioinspired neuromorphic computing. X-ray photoelectron spectroscopy (XPS) was employed to explore oxygen vacancy concentrations in bilayer TiO2/HfO2 films. Gaussian fitting for O1s peaks...
Paper Details
Title
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
Published Date
Jan 1, 2022
Volume
96
Pages
94 - 102
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