Electronic Structure, Optical Properties, and Potential Applications of n-BN/WS2 (n = 1 to 4) Heterostructures

Volume: 50, Issue: 8, Pages: 4696 - 4704
Published: May 29, 2021
Abstract
In contrast to bulk semiconductors, the bandgap of two-dimensional (2D) transition-metal dichalcogenide monolayers is strongly dependent on the dielectric environment. The optical properties of these 2D materials can also be significantly modified by substrate screening. We report herein the structural, electronic, and optical properties of n-BN/WS2 heterostructures consisting of a WS2 monolayer on top of n layers of BN substrates (n = 1 to 4)...
Paper Details
Title
Electronic Structure, Optical Properties, and Potential Applications of n-BN/WS2 (n = 1 to 4) Heterostructures
Published Date
May 29, 2021
Volume
50
Issue
8
Pages
4696 - 4704
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