Strain engineering 2D MoS2 with thin film stress capping layers

Volume: 8, Issue: 4, Pages: 045001 - 045001
Published: Jul 5, 2021
Abstract
We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS2 via the deposition of stressed thin films to encapsulate exfoliated flakes. With this technique we can directly engineer MoS2 strain magnitude by changing deposited thin film stress, therefore allowing variable strain to be applied on a flake-to-flake level. These thin film stressors are analogous to SiNx based...
Paper Details
Title
Strain engineering 2D MoS2 with thin film stress capping layers
Published Date
Jul 5, 2021
Volume
8
Issue
4
Pages
045001 - 045001
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