Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers

The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated in the GaAs/Al0.30Ga0.70As structures with different compositions of the quantum well (QW) layers covered of QDs: GaAs or Al0.10Ga0.75In0.15As. The heat treatments of the QD structures were carried out at 640°C or 710°C for 2 h in an argon atmosphere. To estimate the compositions of QDs and capping QWs, photoluminescence (PL) and high-resolution X-ray...