Maximizing the Formation of Reactive Oxygen Species for Deep Oxidation of NO via Manipulating the Oxygen-Vacancy Defect Position on (BiO)2CO3

Volume: 11, Issue: 13, Pages: 7735 - 7749
Published: Jun 11, 2021
Abstract
Constructing oxygen vacancies (OVs) in metal-oxide semiconductors is an effective and simple way to enhance the photocatalytic performance via promoting the utilization of solar light and boosting the formation of surface reactive oxygen species (ROS). The presence of different oxygen atoms in the same crystal structure can possibly lead to the formation of different types of OVs with distinct physicochemical and optoelectronic properties....
Paper Details
Title
Maximizing the Formation of Reactive Oxygen Species for Deep Oxidation of NO via Manipulating the Oxygen-Vacancy Defect Position on (BiO)2CO3
Published Date
Jun 11, 2021
Volume
11
Issue
13
Pages
7735 - 7749
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